Photoluminescence from undoped silicon after chemical etching combined with metal plating
نویسندگان
چکیده
T. Hadjersi, N. Gabouze , N. Yamamoto, K. Sakamaki, H. Takai, A. Ababou, and E.S. Kooij 1 Unité de Développement de la Technologie du Silicium (UDTS), 2, Bd. Frantz Fanon, B.P. 399 Alger-Gare, Alger, Algeria 2 Communications Research Laboratory, Basic and Advanced Research, Division, 4-2-1, Nukui-kitamachi, Koganei,Tokyo, 184-8795, Japan 3 Tokyo Denki University, Department of Electrical Engineering, 2-2 Kanda-Nishiki-cyo, Chiyoda-ku, Tokyo, 101-8457, Japan 4 USTHB, Faculté d’électronique, BP 32 EL Alia Bab, Ezzouar, Alger, Algeria 5 Solid State Physics, MESA+ Research Institute, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands
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